Carbon nanotube (CNT) transistors are essentially gate-all-around (GAA) field-effect transistors (GAA FETs) that can be ...

Several foundries continue to develop new processes based on next-generation gate-all-around transistors, including more advanced high-mobility versions, but bringing these technologies into ...

creating a new concept called gate-all-around field-effect transistors, which are shortened to GAA transistors, or GAAFETs. Gate-all-around transistors use stacked nanosheets. These separate ...

Intel revealed new research for gate-all-around (GAA) transistor scaling, a vital development as it allows for processor sizes less than seven nanometers. These are considered the successors of ...

These processes will provide both speed and power improvements. At 3nm, though, Samsung plans to jump to nanosheet FETs, a type of GAA transistor, sometime next year or in 2022. TSMC, meanwhile, plans ...

Lam Research has proposed several ideas for achieving this, including flipping the cell, sliding the bit line, and employing gate-all-around (GAA) transistors. "Etch and deposition experts may be ...

Innovations such as FinFET and GAA transistor technology ensure its dominance in advanced process technologies, including the cutting-edge 5-nanometer and upcoming 2-nanometer nodes. These ...