Intel, Samsung, TSMC and others are laying the groundwork for the transition from today’s finFET transistors to new gate-all-around field-effect transistors (GAA FETs) at the 3nm and 2nm nodes, ...

creating a new concept called gate-all-around field-effect transistors, which are shortened to GAA transistors, or GAAFETs. Gate-all-around transistors use stacked nanosheets. These separate ...

Carbon nanotube (CNT) transistors are essentially gate-all-around (GAA) field-effect transistors (GAA FETs) that can be applied to pretty much everything, and have all the things that one expects ...

Since starting mass production of the industry’s first 3nm process node applying Gate-All-Around (GAA) transistor architecture, Samsung has strengthened its GAA technology leadership by successfully ...

The decision involves the move to extend today’s finFETs to 3nm, or to implement a new technology called gate-all-around FETs (GAA FETs) at 3nm or 2nm. An evolutionary step from finFETs, ...

Intel revealed new research for gate-all-around (GAA) transistor scaling, a vital development as it allows for processor sizes less than seven nanometers. These are considered the successors of ...

In contrast to Samsung's 3nm process node, which makes use of gate-all-around (GAA) transistor structures, TSMC will continue with FinFET transistors, relying on "innovative features" to achieve ...