A major breakthrough at Peking University might have just found the first step beyond silicon for semiconductors.

By way of example, TSMC's N3E node as used in the latest Apple chips has gate pitch of at minimum 45 nm and a metal pitch of ...

To achieve smaller semiconductor structures, improved transistor designs are essential. Leading-edge fabs have been working ...

Peking University has published its findings on a wafer-scale 2D GAAFET in Nature, pointing a new path into the Angstrom era ...

At Embedded World 2025 in Germany, Intel unveiled its Panther Lake processor, a key part of the Core Ultra 300H/U series and ...

Carbon nanotube (CNT) transistors are essentially gate-all-around (GAA) field-effect transistors (GAA FETs) that can be ...

For all of these reasons, gate-all-around transistors are emerging as the successors to finFETs for extremely scaled process nodes. GAA devices were first proposed in 1990, Cai said, well before ...

The semiconductor industry is making its first major change in a new transistor type in more than a decade, moving toward a next-generation structure called gate-all-around (GAA) FETs. Although GAA ...

creating a new concept called gate-all-around field-effect transistors, which are shortened to GAA transistors, or GAAFETs. Gate-all-around transistors use stacked nanosheets. These separate ...

front-side power designs. RibbonFET gate-all-around (GAA) transistor technology, enabling precise control of electrical current. RibbonFET allows further miniaturization of chip components while ...

Since starting mass production of the industry’s first 3nm process node applying Gate-All-Around (GAA) transistor architecture, Samsung has strengthened its GAA technology leadership by successfully ...

According to Lam Research, this etching equipment supports next-generation semiconductor manufacturing processes, including advanced dynamic random-access memory (DRAM) and 3D NAND flash memory, with ...