A major breakthrough at Peking University might have just found the first step beyond silicon for semiconductors.

Peking University has published its findings on a wafer-scale 2D GAAFET in Nature, pointing a new path into the Angstrom era ...

To achieve smaller semiconductor structures, improved transistor designs are essential. Leading-edge fabs have been working ...

Carbon nanotube (CNT) transistors are essentially gate-all-around (GAA) field-effect transistors (GAA FETs) that can be ...

The semiconductor industry is making its first major change in a new transistor type in more than a decade, moving toward a next-generation structure called gate-all-around (GAA) FETs. Although GAA ...

At Embedded World 2025 in Germany, Intel unveiled its Panther Lake processor, a key part of the Core Ultra 300H/U series and ...

creating a new concept called gate-all-around field-effect transistors, which are shortened to GAA transistors, or GAAFETs. Gate-all-around transistors use stacked nanosheets. These separate ...

Featuring BSPDN, RibbonFET GAA technology, and improved chip densities ... GPUs possibly using the new Intel 18A process node. As transistor density increases, mixed signal and power routing ...

Akara enables the scaling of gate-all-around (GAA) transistors and 6F 2 DRAM and 3D NAND devices, and is extendible for 4F 2 DRAM, complementary field effect transistors, and 3D DRAM. These ...